Silicon p-FETs from ultrahigh density nanowire arrays

Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10(18) cm(-3). Top-gated 4-mu m-wide Si nanowire p-FETs yielded low off-currents (similar to 10(-12) A), high on/off ratios (10(5)-10(6)), good on current values (30 mu A/mu m), high mobilities (similar to 100 cm(2)/V-s), and low subthreshold swing values (similar to 80 mV/decade between 10(-12) and 10(-10) A increasing to 200 mV/decade between 10(-10)-10(-8) A).