Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 6, Pages 460-462Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.874764
Keywords
flexible circuits; printed transistors; silicon-on-insulator (SOI) wafer; thin film transistor (TFT)
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This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities > 500 cm(2)/V(.)s, ON/OFF ratios > 10(5), and response frequencies > 500 MHz at channel lengths of 2 mu m. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.
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