Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra

In this work we investigate the electronic and optical properties of self-assembled quantum dots by means of a tight-binding model. Coulomb and dipole matrix elements are calculated from the one-particle wave functions which fully include the atomistic wurtzite structure of the low-dimensional heterostructures and serve as an input for the calculation of optical spectra. For the investigated InN/GaN material system, the optical selection rules are found to be strongly affected by band-mixing effects for the localized valence band states. Within this framework, excitonic absorption and emission spectra are analyzed for different sizes of the investigated lens-shaped quantum dots, including the influence of the intrinsic and strain-induced electrostatic field of the wurtzite structure. A dark exciton ground state for small quantum dots is found.