Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 45, Issue 6B, Pages 5495-5500Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.5495
Keywords
BST films; Cu; Cu(Mg); bottom electrodes; MgO
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Cu(Mg) alloy films have replaced pure Cu as bottom electrodes for (Ba,Sr)TiO3 (BST) capacitors used in high-frequency devices. A combined BST/Cu(Mg) structure reduced the leakage current density to 3.0 x 10(-8) A/cm(2) at 1 MV/cm, and increased the breakdown field from 0.4 to 2.4 MV/cm at 10(-6) A/cm(2), from the corresponding values of the BST/Cu structure. High-quality characteristics probably follow the formation of a self-aligned MgO layer following the deposition of a Cu(Mg) alloy by annealing in an oxygen ambient, yielding an electrode with an excellent diffusion barrier and electrical characteristics, which is therefore effective in a BST thin-film capacitor. Additionally, the bias temperature stress and time-dependent dielectric breakdown in ambient nitrogen at an electric field of up to 2 V at temperatures between 100 and 200 degrees C were considered to accelerate Cu+ ion drift.
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