Journal
THIN SOLID FILMS
Volume 508, Issue 1-2, Pages 186-189Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2005.07.352
Keywords
Si quantum dot; phosphorous doping; LPCVD; AFM/Kelvin probe
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Phosphorous doping to Si quantum dots was performed by a pulse injection of 1% PH3 diluted with He during the dot formation on thermally grown SiO2 from thermal decomposition of pure SiH4, and electron charging to and discharging from P-doped Si dots were studied to characterize their electronic charged states using a Kelvin probe technique in atomic force microscopy (AFM). The potential change corresponding to the extraction of one electron from each of the P-doped Si dots was observed after applying a tip bias as low as +0.2 V while for undoped Si dots, with almost the same size as P-doped Si dots, almost the same amount of the potential change was detectable only when the tip bias was increased to similar to 1 V. It is likely that, for P-doped Si dots, the electron extraction from the conduction band occurs and results in a positively charged state with ionized P donor. (c) 2005 Elsevier B.V. All rights reserved.
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