Journal
PHYSICAL REVIEW LETTERS
Volume 96, Issue 22, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.96.228102
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Interfacing of nerve cells and field-effect transistors is determined by current flow along the electrical resistance of the cell-chip junction. We study the thermal noise of the junction by measuring the fluctuations of extracellular voltage with a low-noise transistor. We find a spectral power density of 5x10(-14) V-2/Hz and interpret it as Nyquist noise of the cell-chip junction with a resistance of 3 MOhm. The thermal noise allows us to elucidate the properties of cell adhesion and it sets a thermodynamical limit for the signal-to-noise ratio of neuroelectronic interfacing.
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