4.6 Article

Organic thin-film transistors with high mobilities and low operating voltages based on 5,5′-bis-biphenyl-dithieno[3,2-b:2′,3′-d]thiophene semiconductor and polymer gate dielectric

Journal

APPLIED PHYSICS LETTERS
Volume 88, Issue 24, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2209213

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Employing 5,5(')-bis-biphenyl-dithieno[3,2-b:2('),3(')-d]thiophene (BPDTT) as semiconducting layer and poly(vinyl alcohol) (PVA) as gate dielectric layer, we have fabricated organic thin-film transistors. These devices exhibit excellent field-effect performances with a high mobility of up to 0.6 cm(2)/V s and a very low operating voltage (< 1 V) at room temperature. The single crystal of BPDTT was grown and analyzed. The high performances are mainly attributed to the close herringbone packing of BPDTT molecules and the high homogeneity between PVA and BPDTT molecules. (c) 2006 American Institute of Physics.

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