Journal
JOURNAL OF APPLIED PHYSICS
Volume 99, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2208414
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A yellow-orange nitrogen-doped zinc oxide (ZnO:N) film was deposited on a quartz glass substrate at 510 K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The lattice constants of the as-grown ZnO:N are much larger than those of undoped ZnO, and decrease with increasing annealing temperature due to escape of the nitrogen from the ZnO:N and decrease of tensile stress, accompanied with color change from yellow-orange to pale yellow. The nitrogen occupies two chemical environments in the ZnO:N based on x-ray photoelectron spectroscopy measurement. One is N-O acceptor formed by substitution of N atom for O sublattice, and another is (N-2)(O) double donors produced by substitution of N molecular for O site, which make the lattice constants expanded. The as-grown ZnO:N film shows insulating, but behaves p-type conduction in the dark after annealed at 863 K for 1 h under 10(-3) Pa. Unfortunately, the p-type conduction is not stable and reverts to n type soon. However, after illuminated by sunlight for several minutes, the n-type ZnO:N transforms into p type again. The mechanism of the transformation of the conductivity behavior is discussed in the present work.
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