Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

Mn-substituted BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt/Ti/SiO2/Si(100) structures. X-ray diffraction analysis revealed that the BFO lattice was somewhat distorted when 5% of Fe atoms were substituted with Mn atoms, but no secondary phase appeared by Mn substitution up to 20%. The leakage current density at higher electric field than 0.6 MV/cm decreased by Mn substitution of 3%-5%, compared with a pure BFO film. Because of the low leakage current density in the high electric field region, well saturated polarization hysteresis loops with remanent polarization of 100 mu C/cm(2) were observed in the 5% Mn-substituted BFO films at a measurement frequency of 1 kHz. (c) 2006 American Institute of Physics.