The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode

We have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chifin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I-V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (E-c-0.897) to (E-c-0.574) eV have been determined from the I-V characteristics. The interface state density, N-55, ranges from 5.965 x 10(12) cm(-2) eV(-1) in (E-c-0.897) eV to 1.706 x 10(13) cm(-2) eV(-1) in (E-c-0.574) eV and has an exponential rise with bias this energy range. (c) 2006 Elsevier B.V. All rights reserved.