Journal
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
Volume 50, Issue 4-5, Pages 377-386Publisher
IBM CORP
DOI: 10.1147/rd.504.0377
Keywords
-
Ask authors/readers for more resources
This paper reviews progress and current critical issues with respect to the integration of germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel MOSFET structures. The device design and scalability of strained-Ge buried-channel MOSFETs are discussed on the basis of our recent results. CMOS-compatible integration approaches of Ge channel devices are presented.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
