Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 24, Issue 4, Pages 2047-2052Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.2216714
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ZnO nanorod arrays fabricated on ZnO buffer layers on Si wafers were grown using a low-temperature solution method and were characterized by various techniques. Buffer layers were prepared using metal organic chemical vapor deposition and a sputter-oxidation method. Aligned ZnO nanorods were deposited at 90 degrees C on the substrates by a hydrothermal treatment using a zinc salt and aqueous ammonia solution. The ZnO nanorod arrays were characterized by scanning electron microscopy, x-ray diffraction., x-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The as-grown ZnO nanorod arrays exhibited broad deep-level emission centered at similar to 564 nm. The intensity of the deep-level emission decreased and band edge emission centered at 379 nut appeared after air annealing. Samples annealed in hydrogen showed only band edge emission. (c) 2006 American Vacuum Society.
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