Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 7, Pages 564-566Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.876309
Keywords
aluminum (Al); flat-panel display; metal gate; metal-replaced junction (MERJ); polycrystalline silicon (poly-Si); thin-film transistor (TFT)
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Polycrystalline silicon thin-film transistors (TFTs) with metallic gates and junctions realized using a three-mask metal-replaced junction (MERJ) technology have been fabricated and characterized. Compared to those of a conventional TFT, the process of making a MERJ TFT is simplified, and the resistance of the junctions and gate is reduced. The low resistance of the metallic junctions allows a greater recovery of the intrinsic characteristics of a MERJ TFT, and the reduced signal delay on a low-resistance metallic gate line makes the TFT particularly suitable for realizing large-area active-matrix flat-panel displays.
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