Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2219389
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We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs. (c) 2006 American Institute of Physics.
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