Structure and photoluminescence properties of evaporated GeOx thin films

Amorphous GeOx alloys were prepared by evaporation of GeO2 powder on substrates maintained at 100 degrees C. The evolution of the structure was investigated by infrared-absorption spectrometry, Raman spectrometry and transmission electron microscopy experiments for annealing temperatures less than 600 degrees C. These experiments allowed us to follow the phase separation of the alloy and to observe the appearance of amorphous and crystallized Ge aggregates. The evolution of the photoluminescence in the range of 560-1550 nm was correlated to the structure of the films. (c) 2006 American Institute of Physics.