Journal
ELECTRONICS LETTERS
Volume 42, Issue 14, Pages 821-822Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20061088
Keywords
-
Categories
Ask authors/readers for more resources
KOH treatment is investigated as a method to improve the IN characteristics of AIGaN-based photodiodes. The defects in the photodiode may enhance the dark current, and cause some photocurrents with incident photon energy less than the absorption edge. With the KOH treatment in the process, the defects and whisker-like features could be reduced. High rejection ratio in the spectral responsivity could be achieved. The KOH treatment is a good method to reduce the surface defects in AlGaN-based photodiodes.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available