Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2219989
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High-energy focused proton beam irradiation has been used to controllably blueshift the resonant wavelength of porous silicon microcavities in heavily doped p-type wafers. Irradiation results in an increased resistivity, hence a locally reduced rate of anodization. Irradiated regions are consequently thinner and of a higher refractive index than unirradiated regions, and the microcavity blueshift arises from a net reduction in the optical thickness of each porous layer. Using this process wafers are patterned on a micrometer lateral scale with microcavities tuned to different resonant wavelengths, giving rise to high-resolution full-color reflection images over the full visible spectrum. (c) 2006 American Institute of Physics.
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