Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2221524
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The permittivity of a ferroelectric n-type semiconductor varies smoothly with depth beneath a reversed biased Schottky contact. In partially depleted films, the depletion layer controls the capacitance. In fully depleted films the inverse capacitance is proportional to the thickness, which suggests that Schottky effects do not cause dead-layer behavior. (c) 2006 American Institute of Physics.
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