Magnetoresistance in silicon-based semiconductor-metal hybrid structures

Recent experimental and theoretical studies have shown that nonmagnetic semiconductor-metal hybrid (SMH) structures can exhibit a very large geometrical magnetoresistance response. We report the realization of silicon-based SMH structures where the metal is replaced by metallic silicide, and we identify key process and material requirements. The devices exhibit larger magnetoresistance responses than homogeneous silicon systems, and a finite element model correctly predicts these responses. In particular, it is experimentally verified that the response is further increased by alternating the current leads/voltage probes. Such scalable systems may be used to study the geometrical magnetoresistance in generic SMH structures as carrier transport moves from the diffusive to the ballistic regime. (c) 2006 American Institute of Physics.