Journal
NANO LETTERS
Volume 6, Issue 7, Pages 1514-1517Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl061102b
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Phase-change memory materials have stimulated a great deal of interest although the size-dependent behaviors have not been well studied due to the lack of method for producing their nanoscale structures. We report the synthesis and characterization of GeTe and Sb2Te3 phase-change nanowires via a vapor-liquid-solid growth mechanism. The as-grown GeTe nanowires have three different types of morphologies: single-crystalline straight and helical rhombohedral GeTe nanowires and amorphous curly GeO2 nanowires. All the Sb2Te3 nanowires are single-crystalline.
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