4.6 Article

Growth and epitaxial structure of LaVOx films

Journal

APPLIED PHYSICS LETTERS
Volume 89, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2227786

Keywords

-

Ask authors/readers for more resources

We have studied the phase diagram of LaVOx films grown on (001) SrTiO3 substrates by pulsed laser deposition. With increasing oxygen partial pressure, the growth phase diagram varies between epitaxial perovskite LaV3+O3 single crystal films and polycrystalline monoclinic LaV5+O4. An interesting feature is the lack of an accessible phase corresponding to V4+, resulting in an extended region of phase coexistence of LaVO3 and LaVO4. Atomically flat LaVO3 could be grown in both layer-by-layer and step-flow growth modes, making this a promising candidate for incorporating strongly correlated electrons in atomic-scale perovskite heterostructures. (c) 2006 American Institute of Physics.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available