Journal
APPLIED SURFACE SCIENCE
Volume 252, Issue 19, Pages 7262-7264Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2006.02.175
Keywords
SiGe; SOI; composition; SIMS; RBS; AES
Ask authors/readers for more resources
This work explored quantitative analyses of SiGe films on either Si bulk or Sol wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si+ and Ge+ inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O-2(+) beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%. (c) 2006 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available