Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2245209
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The authors demonstrate that by lowering deposition temperature of ZnMnO films (T < 500 degrees C) they can avoid Mn clustering and creation of inclusions of Mn oxides, which are frequently formed in ZnMnO layers grown by high temperature methods. Low temperature growth is achieved using atomic layer deposition and organic zinc and manganese precursors.
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