Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 8, Pages 688-691Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.879028
Keywords
high-kappa gate dielectrics; Hooge's parameter; interfacial layer; low-frequency (LF) noise; metal gates; mobility fluctuations
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The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-kappa, gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of IN noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-kappa, layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.
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