Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 9, Issue 4-5, Pages 541-545Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2006.08.046
Keywords
Raman spectroscopy; Si1-xGex alloys; strain
Ask authors/readers for more resources
A theoretical approach to the lattice dynamics of Si1-xGex alloys within a valence force field framework is discussed. A modified Keating model, the anharmonic Keating, was employed to perform supercell calculations in order to investigate accurately the three Raman active optical phonon modes. Theoretical results on both relaxed and strained SiGe samples are shown. A detailed study of the biaxial strain-induced shift of phonon modes of epitaxial SiGe alloys has been performed in all the composition range. Furthermore, a comparison of experimental data with the model results on phonon strain shift coefficients will be also discussed. (C) 2006 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available