Journal
PHYSICAL REVIEW B
Volume 74, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.74.075334
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This paper discusses the physical mechanisms governing the nucleation and growth of Si nanocrystals embedded in an amorphous SiO2 matrix. Reactive pulsed laser deposition combined with a postannealing treatment is shown to be a flexible approach to synthesize Si nanocrystals. This technique ensures an excellent control of Si nanocrystal size by varying the oxygen pressure. By correlating nanocrystal size (measured by x-ray diffraction and transmission electron microscopy) with the nonoxidized Si volume fraction (determined by x-ray photoemission spectroscopy), it is found that the formation of nanocrystals follows classical nucleation theory, whereby the average distance between nuclei centers remains constant.
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