Journal
IEEE ELECTRON DEVICE LETTERS
Volume 27, Issue 8, Pages 681-683Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2006.879042
Keywords
carbon nanotube field-effect transistor; (CNFET); gigahertz; high frequency (HF)
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In this letter, the authors report on the high-frequency (RF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes; have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (vertical bar H-21 vertical bar(2)) cutoff frequency (f(t)) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable.
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