Journal
JOURNAL OF APPLIED PHYSICS
Volume 100, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2221520
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Semi-insulating character ( sheet resistivity of 3.26 x 10(11) ohm/sq ) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor ( HEMT ) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. (c) 2006 American Institute of Physics.
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