Journal
NANOTECHNOLOGY
Volume 17, Issue 15, Pages 3724-3727Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/17/15/018
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We use epitaxial Ge islands on silicon-on-insulator ( 001) to initiate and drive the dewetting of the ultrathin (< 8 nm) Si template layer. The process exposes the underlying SiO2 layer and transforms the Ge islands into oxide-supported, electrically isolated, Ge-rich nanocrystals. We investigate the process of dewetting and demonstrate that it can be used for the controlled assembly of nanocrystals-from isolated single ones to dense arrays.
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