Dependency of organic phototransistor properties on the dielectric layers

Organic phototransistors with pentacene semiconductor and Ta2O5 or polymethyl methacrylate (PMMA) dielectric layer have been investigated. It was found that the phototransistor properties strongly depend on the dielectric layer. Under a broadband light with 10 mW/cm(2), the sensitivity of the Ta2O5 based transistor is much higher than that of the PMMA based transistor. For Ta2O5 based transistor, the photosensitivity (the ratio of photocurrent to dark current) and the threshold voltage shift are 4000 and 13.5 V, respectively. While for PMMA based transistor, the corresponding values are only 0.5 and 2.9 V, respectively. That large difference is attributed to the electron trapping ability of Ta2O5. (c) 2006 American Institute of Physics.