Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2336722
Keywords
-
Categories
Ask authors/readers for more resources
Organic phototransistors with pentacene semiconductor and Ta2O5 or polymethyl methacrylate (PMMA) dielectric layer have been investigated. It was found that the phototransistor properties strongly depend on the dielectric layer. Under a broadband light with 10 mW/cm(2), the sensitivity of the Ta2O5 based transistor is much higher than that of the PMMA based transistor. For Ta2O5 based transistor, the photosensitivity (the ratio of photocurrent to dark current) and the threshold voltage shift are 4000 and 13.5 V, respectively. While for PMMA based transistor, the corresponding values are only 0.5 and 2.9 V, respectively. That large difference is attributed to the electron trapping ability of Ta2O5. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available