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REVIEW OF SCIENTIFIC INSTRUMENTS
Volume 77, Issue 9, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.2349300
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We present a method for electromechanical characterization of carbon nanotube (CNT) films grown on silicon substrates as potential electrical contacts. The method includes measuring the sheet resistance of a tangled CNT film, measuring the contact resistance between two tangled CNT films, and investigating the dependence on applied force and postgrowth annealing. We also characterize Au-CNT film contact resistance by simultaneous measurement of applied force and resistance. We measure a contact resistance as low as 0.024 Omega/mm(2) between two films of tangled single-wall carbon nanotubes grown on a polished silicon substrate and observe an electromechanical behavior very similar to that predicted by classical contact theory. (c) 2006 American Institute of Physics.
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