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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 45, Issue 9A, Pages 6830-6836Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.6830
Keywords
silicon carbide; MOSFET; radiation-induced interface traps; radiation-induced oxide-trapped charge; step bunching; effective channel mobility; surface roughness
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The influence of gamma-radiation on the electrical characteristics of 6H-SiC p-channel metal-oxide-semi conductor field effect transistors (MOSFETs) containing step bunching is reported. The formation of step bunching perpendicular to the channel inhibited the current flow, whereas such an effect was not seen in devices with step bunching formed parallel to the channel. The effective channel mobility in the latter devices increases with gamma-radiation. This improvement of the hole mobility is attributed partially to the positively trapped charges screened the holes from approaching too close to the surface and partially to the effect of position of these charges, resulting in a reduction of scattering and capture of holes. No enhancement in the effective channel mobility was observed for devices with no step bunching or with root mean square roughness in the channel region less than 4 nm. Further irradiation leads to a decrease in the effective channel mobility due to both the formation of latent interface traps and electrostatics repulsion of holes.
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