Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering

The Yb:Er co-doped Al2O3 thin film was deposited on oxidized silicon wafers by microwave ECR plasma source enhanced RF magnetron sputtering, and annealed from 800 degrees C to 1000 degrees C. The photoluminescence at 1.53 mu m of thin film was obtained under room temperature. The mixture phase structure of gamma and theta is observed by XRD, and the compositions of the thin film are investigated by EPMA. The maximum PL intensity was achieved with O-2:Ar at 1:1, annealing temperature at 900 degrees C, and experimental ratio of Yb:Er at 1:3.6. The energy transfer mechanism between Er and Yb ions is supported by theoretical analysis and experiment results. (c) 2005 Elsevier B.V. All rights reserved.