4.2 Article

Fine pattern fabrication on SnO2:: Sb thin films formed by the sol-gel process

Journal

SURFACE AND INTERFACE ANALYSIS
Volume 38, Issue 9, Pages 1291-1295

Publisher

WILEY
DOI: 10.1002/sia.2442

Keywords

SnO2 films; photosensitivity; fine patterning; sol-gel

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The effects of UV irradiation on the properties of Sb5+ doped gel films were studied, which were prepared from stannic chloride (SnCl4 center dot 5H(2)O) and sodium alkoxide (NaOR) modified with benzytone (BzAcH). It was found that the absorption peak at around 335 nm due to the pi --> pi* transition showed the formation of a chelate ring to Sn. The intensity of the absorption band decreased with UV light irradiation at 365 nm from a high-pressure mercury lamp (250W). This finding showed that the SnO2: Sb gel films modified with BzAcH were photosensitive to UV light. Additionally, this finding was applied to the fabrication of patterns on the SnO2: Sb thin films. A gel film was irradiated through a mask and leached in water. Then a positive pattern was formed on the SnO2: Sb thin films attached to the substrate. After heat treatment, the SnO2: Sb gel films changed into transparent conductive films with an average conductivity of 1.20 X 10(-2) Omega cm and with a transmission of 97.1%. Copyright (C) 2006 John Wiley & Sons, Ltd.

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