Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 16, Issue 9, Pages 520-522Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2006.880696
Keywords
heterojunction bipolar transistor (HBT); low-noise amplifier (LNA); low-power; noise figure (NF); radar; silicon-germanium (SiGe); X-band
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A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780 x 660 mu m(2). The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across X-band, and an input third-order intercept point of -9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance of this LNA, together with its natural total-dose radiation immunity, demonstrates the potential of SiGe HBT technology for near-space radar applications.
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