Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 53, Issue 9, Pages 2207-2215Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2006.881054
Keywords
AlGaN/GaN; depletion mode (D-mode); enhancement mode; fluoride; gate current; high-electron mobility transistor (HEMT); immobile negative charge; plasma treatment; post-gate rapid thermal annealing (RTA); threshold voltage
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This paper presents a method with an accurate control of threshold voltages (V-th) of AlGaN/GaN high-electron mobility transistors (HENITs) using a fluoride-based plasma treatment. Using this method, the Vth of AlGaN/GaN HENITs can be continuously shifted from -4 V in a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.9 V in an enhancement-mode AlGaN/GaN HEMT. It was found that the plasma-induced damages result in a mobility degradation of two-dimensional electron gas. The damages can be repaired and the mobility can be recovered by a post-gate annealing step at 400 degrees C. At the same time, the shift in Vth shows a good thermal stability and is not affected by the post-gate annealing. The enhancement-mode HEMTs show a performance (transconductance, cutoff frequencies) comparable to the D-mode HEMTs. Experimental results confirm that the threshold-voltage shift originates from the incorporation of F ions in the AlGaN barrier. In addition, the fluoride-based plasma treatment was also found to be effective in lowering the gate-leakage current, in both forward and reverse bias regions. A physical model of the threshold voltage is proposed to explain the effects of the fluoride-based plasma treatment on AlGaN/GaN HEMTs.
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