3.8 Article

Structural properties of the diamond nucleation layer on iridium analyzed by laterally resolved X-ray absorption spectroscopy

Journal

Publisher

INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.L984

Keywords

diamond; heteroepitaxy; iridium; chemical vapor deposition; nucleation; X-ray absorption near edge structure; photoemission electron microscopy; synchrotron radiation

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The complex structure of the diamond nucleation layer on iridium has been studied by X-ray absorption near edge structure (XANES) in combination with X-ray photoemission electron microscopy (X-PEEM). In contrast to all other substrate materials, on iridium the diamond nuclei formed by the bias enhanced nucleation (BEN) procedure gather in islands (domains) with micron-size lateral dimensions. Laterally resolved XANES spectra of the carbon-K absorption edge clearly show the difference in carbon bonding structure Outside and inside the domain area. A positive feedback mechanism for the nucleation and lateral crystal growth, are two alternative concepts which can explain the domain formation.

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