Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 45, Issue 33-36, Pages L984-L986Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.45.L984
Keywords
diamond; heteroepitaxy; iridium; chemical vapor deposition; nucleation; X-ray absorption near edge structure; photoemission electron microscopy; synchrotron radiation
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The complex structure of the diamond nucleation layer on iridium has been studied by X-ray absorption near edge structure (XANES) in combination with X-ray photoemission electron microscopy (X-PEEM). In contrast to all other substrate materials, on iridium the diamond nuclei formed by the bias enhanced nucleation (BEN) procedure gather in islands (domains) with micron-size lateral dimensions. Laterally resolved XANES spectra of the carbon-K absorption edge clearly show the difference in carbon bonding structure Outside and inside the domain area. A positive feedback mechanism for the nucleation and lateral crystal growth, are two alternative concepts which can explain the domain formation.
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