TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane

The deformation microstructure of single crystals of 4H-SiC resulting from microindentations on a prismatic surface was investigated by TEM. Indentations were performed at 400 and 675 degrees C, i.e. below the brittle to ductile transition temperature of 4H-SiC ( temperature close to 1100 degrees C). TEM analysis reveals dissociated dislocations as well as extended stacking faults in the basal plane. In addition, perfect edge dislocations are observed on prismatic planes. From the observations, it is assumed that perfect dislocations are nucleated in the prismatic plane and cross-slip on the basal one where they dissociate.