Journal
APPLIED PHYSICS B-LASERS AND OPTICS
Volume 84, Issue 3, Pages 429-431Publisher
SPRINGER
DOI: 10.1007/s00340-006-2247-5
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We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.
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