Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume 45, Issue 9B, Pages 7516-7519Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.45.7516
Keywords
PZT; electrooptic coefficient; optical properties; epitaxial film; silicon
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The electrooptic (EO) properties of light propagated through lead zirconate titanate (PZT) films prepared on silicon (Si) substrates were successfully evaluated. Polycrystalline, {101}-oriented and {100}-oriented epitaxial PZT films with-a thickness of approximately 2pm were prepared on various types of Si substrate by chemical solution deposition. The anisotropic EO effect was observed in the polycrystalline and {101}-oriented PZT films. The in-plane and out-of-plane refractive indices of the {100}-oriented epitaxial PZT films changed with the type of substrate. The EO effect of the I 100 1 oriented epitaxial PZT film grown on a Si substrate was found to be more isotropic than those of the polycrystalline and {101}-oriented PZT films. The largest EO coefficients (r(e) = 54 pm/V and r(c) = 60 pm/V) were obtained in the {101}-oriented PZT film on the Si substrate.
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