Journal
JOURNAL OF MICROSCOPY
Volume 223, Issue -, Pages 172-178Publisher
WILEY
DOI: 10.1111/j.1365-2818.2006.01613.x
Keywords
GaN-based laser diode; high-angle annular dark-field scanning transmission electron microscopy; interference and coherence; multiple quantum wells; strained-layer superlattices
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The first part of this paper is devoted to physics, to explain high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging and to interpret why HAADF-STEM imaging is incoherent, instructing a strict definition of interference and coherence of electron waves. Next, we present our recent investigations of InGaN/GaN multiple quantum wells and AlGaN/GaN strained-layer superlattice claddings in GaN-based violet laser diodes, which have been performed by HAADF-STEM and high-resolution field-emission gun scanning electron microscopy.
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