Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2346135
Keywords
-
Categories
Ask authors/readers for more resources
In-grown stacking faults (IGSFs) are planar defects that do not propagate under either an applied optical or electrical bias; however, their effect upon the electrical characteristics of diodes is not well understood. We present evidence for a multilayered IGSF and discuss its electrical and optical characteristics. These IGSFs, despite similar electroluminescence signatures, were observed to act as either a current barrier or as a short between the p(+) and n(+) layers, causing increases in the leakage current in p-i-n diodes. The difference in conduction behavior is attributed to the nucleation location of the IGSF within the diode drift region. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available