Self-catalysis: A contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition

A unified mechanism for the growth of a wide variety of long, uniform, single-crystal nanowires and whiskers, including III-V and II-VI binary, ternary, and quaternary nanowires and whiskers, without the use of any substrate and catalyst has been presented. While elucidating the mechanism, attempts have been made to provide a kinetic and thermodynamic rationale for the growth. Various features of the growth mechanism, including the formation of liquid droplets and seeds, nucleation, and creation of products, have been discussed. Extensive studies of illustrative examples provide the validity of the proposed mechanism. The influence of various parameters such as growth temperature and chamber pressure on the growth mechanism has been studied. The advantages and disadvantages of the proposed mechanism, and its superiority to the well-known vapor-liquid-solid mechanism, have been elucidated. Means to improve the mechanism to obtain self-aligned nanowires and whiskers have been suggested. Based on these, it has been demonstrated that the present mechanism is indeed a powerful self-catalytic growth mechanism uniquely suited to the growth of a wide variety of single-crystal nanowires and whiskers. It can be very useful also for the growth of single-crystal nanotubes. (c) 2006 American Institute of Physics.