Journal
NANO LETTERS
Volume 6, Issue 9, Pages 2021-2025Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl061211q
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This Letter describes a method to generate nanometer scale patterns on insulating substrates and wide band gap materials using critical energy electron beam lithography. By operating at the critical energy ( E-2) where a charge balance between incoming and outgoing electrons leaves the surface neutral, charge-induced pattern distortions typically seen in e-beam lithography on insulators were practically eliminated. This removes the need for conductive dissipation layers or differentially pumped e-beam columns with sophisticated gas delivery systems to control charging effects. Using a scan square method to find the critical energy, sub-100 nm features in 65 nm thick poly( methyl methacrylate) on glass were achieved at area doses as low as 10 mu C/cm(2) at E-2 = 1.3 keV. This method has potential applications in high-density biochips, flexible electronics, and optoelectronics and may improve the fidelity of low voltage e-beam lithography for parallel microcolumn arrays.
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