Journal
SURFACE SCIENCE
Volume 600, Issue 18, Pages 4094-4098Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2006.02.070
Keywords
RHEED; time-resolved diffraction; energy dissipation; silicon; bismuth; heteroepitaxy; thermal boundary conductance
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Ultrafast electron diffraction in a RHEED setup is used to determine the dynamics of surface temperature of an epitaxial thin Bismuth-film on a Si(001) substrate upon fs-laser excitation. A transient temperature rise by 120 K is followed by a slow exponential cooling with time constant 640 ps. The surface cooling rate deviates from simple heat diffusion and is dominated by total internal reflection of ballistic phonons at the Bi/Si-interface which determines the thermal properties of the hetero-system. (c) 2006 Elsevier B.V. All rights reserved.
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