Growth and characterization of single crystal ZnO thin films using inductively coupled plasma metal organic chemical vapor deposition

Zinc oxide thin films were grown on sapphire substrates by metal organic chemical vapor deposition technique. Single crystal films with flat and smooth surfaces were reproducibly obtained, with application of sample bias and O-2 inductively coupled plasma (ICP). At the growth condition of 650 degrees C, 400 W ICP power, -94 V bias voltage and O/Zn ratio of 75, full width at half maximum values of room temperature photoluminescence and high-resolution x-ray diffraction were measured to be 126 meV and 269 arc sec, respectively. It was proposed that application of sample bias provided reactant ions with kinetic energy, which promoted formation of single crystalline films. (c) 2006 American Institute of Physics.