4.6 Article

Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals

Journal

APPLIED PHYSICS LETTERS
Volume 89, Issue 12, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.2354418

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The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping. (c) 2006 American Institute of Physics.

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