Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2357587
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In this contribution the authors studied the optical properties of cubic AlxGa1-xN/GaN single and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. During growth of Al0.15Ga0.85N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. They observe strong room temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson-Schrodinger model calculation. (c) 2006 American Institute of Physics.
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