Journal
APPLIED PHYSICS LETTERS
Volume 89, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2357334
Keywords
-
Categories
Ask authors/readers for more resources
ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >. (c) 2006 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available