Journal
ORGANIC ELECTRONICS
Volume 7, Issue 5, Pages 387-396Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2006.04.005
Keywords
PEDOT center dot PSS; XPS; UPS; interfaces; ion sputtering
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The structure of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT . PSS) consists of an insulating PSS layer surrounding doped PEDOT grains. In this study, X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) are used to investigate the composition and electronic structure of as-loaded and lightly sputtered PEDOT . PSS films. The sputtered film shows a significant increase in the PEDOT/PSS ratio (from 0.12 to 0.7) as well as a build-up of the density of filled states close to the Fermi level, consistent with the removal of the insulating PSS layer and the uncovering of the highly doped conducting PEDOT . PSS. The thickness of PSS layer is estimated at 35 +/- 5 angstrom. The elimination of the PSS shell reduces PEDOT . PSS work function to a value equal to that of highly doped PEDOT. The effect of the PSS removal on the charge injection barrier at the interface with the hole-transport material N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPD) is also investigated. The increase in interface dipole and hole-injection barrier suggests a stronger interaction between the two materials, and points out the key role of the PSS layer in making PEDOT . PSS an effective hole-injection material. (C) 2006 Elsevier B.V. All rights reserved.
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